AFV141KHSR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. AFV141KHSR5 is a high-power RF LDMOS transistor designed for demanding RF power amplifier applications. This device operates at a frequency of 1.4GHz, offering a typical gain of 17.7dB. It is rated for a drain-source voltage of 105V and a test voltage of 50V with a drain current of 100mA. The AFV141KHSR5 boasts a significant output power capability of 1000W, making it suitable for base station infrastructure, industrial heating, and broadcast transmitters. The component is supplied in the NI-1230-4S package, configured as a dual device and available on Tape & Reel (TR). Its robust LDMOS technology enables high efficiency and linearity in demanding RF environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.4GHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 17.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4S |
| Voltage - Rated | 105 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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