AFV141KHR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET, part number AFV141KHR5, is a high-power LDMOS device designed for demanding RF applications. This component operates at a frequency of 1.4GHz, delivering a typical gain of 17.7dB. It is rated for a drain-source voltage (Vds) of 105V, with a test voltage of 50V and a drain current of 100mA under specified test conditions. The AFV141KHR5 is engineered to provide a substantial output power of 1000W. Featuring a dual configuration and housed in a NI-1230-4H (SOT-979A) package, this device is suitable for chassis mounting. Its robust construction and performance characteristics make it ideal for use in base station infrastructure, broadcast transmitters, and industrial heating applications. The component is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-979A |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.4GHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 17.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4H |
| Voltage - Rated | 105 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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