AFV121KGSR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. AFV121KGSR5 is an RF LDMOS power MOSFET designed for high-power applications. This component operates within the 960MHz to 1.22GHz frequency range, delivering a typical gain of 19.6dB and a substantial output power of 1000W. Engineered with LDMOS technology, it is specified for a 50V test voltage and a 112V breakdown voltage. The device is supplied in a NI-1230-4S GULL package, suitable for surface mounting and delivered on tape and reel. Its robust performance characteristics make it a suitable choice for demanding applications in sectors such as wireless infrastructure and industrial RF power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4S GW |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 960MHz ~ 1.22GHz |
| Configuration | Dual |
| Power - Output | 1000W |
| Gain | 19.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4S GULL |
| Voltage - Rated | 112 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
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