AFT27S006N-1000M
RF MOSFETManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc.'s AFT27S006N-1000M is a high-performance RF MOSFET designed for demanding applications. This robust component offers exceptional linearity and efficiency, making it ideal for power amplification stages in wireless infrastructure, broadcast transmitters, and radar systems. Its advanced silicon LDMOS technology ensures superior thermal performance and reliability, crucial for extended operational life in harsh environments. The AFT27S006N-1000M is engineered for optimal performance across a wide frequency range, providing consistent gain and power output. Packaged in bulk for efficient integration into high-volume manufacturing processes, this RF MOSFET is a key enabler for next-generation communication and electronic warfare solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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