AFT26H200W03SR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. AFT26H200W03SR6 is a high-performance RF LDMOS transistor designed for demanding radio frequency applications. This device operates at 2.5 GHz, delivering 45W of output power with a typical gain of 14.1 dB. It features a 28V test voltage and a 65V rating, supported by a 500 mA test current. The component is housed in a NI-1230-4S package, suitable for chassis mounting and supplied on tape and reel. Its robust LDMOS technology makes it ideal for use in telecommunications infrastructure, broadcast equipment, and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.5GHz |
| Power - Output | 45W |
| Gain | 14.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |
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