AFT23S160W02GSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. AFT23S160W02GSR3 is a 2.4 GHz RF LDMOS power transistor designed for high-power applications. This Surface Mount device, packaged in NI-780GS-2L, delivers 45W of output power at a 28V test voltage and 1.1A test current. It offers a typical gain of 17.9dB, making it suitable for demanding RF power amplification stages. The component is manufactured using LDMOS technology, providing excellent performance characteristics for robust operation. This device finds application in wireless infrastructure, radar systems, and other high-frequency communication systems where reliable power delivery is critical. The AFT23S160W02GSR3 is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780GS-2L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.4GHz |
| Power - Output | 45W |
| Gain | 17.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780GS-2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.1 A |
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