AFT23H200-4S2LR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET, part number AFT23H200-4S2LR6, is a dual-channel LDMOS device operating at 2.3GHz. This component delivers 45W of output power with a typical gain of 15.3dB at a test current of 500mA and 28V. It is housed in a NI-1230-4LS2L package, designed for chassis mounting, and is supplied on tape and reel. The rated voltage is 65V. This RF power transistor is commonly utilized in base station infrastructure and other high-frequency communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.3GHz |
| Configuration | Dual |
| Power - Output | 45W |
| Gain | 15.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |
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