AFT23H160-25SR3
RF MOSFET LDMOS 28V NI880X-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET LDMOS, part number AFT23H160-25SR3, is a dual-channel device optimized for high-frequency applications. This component operates at 2.3GHz with a 28V test voltage, delivering 32W of output power and a typical gain of 16.7dB. It features LDMOS technology and is housed in a NI-880X-4L4S-8 package. The current rating at the test condition is 450 mA. This RF power transistor is commonly utilized in telecommunications infrastructure and radar systems requiring robust performance at elevated frequencies. The AFT23H160-25SR3 is supplied on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-880X-4L4S-8 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.3GHz |
| Configuration | Dual |
| Power - Output | 32W |
| Gain | 16.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-880X-4L4S-8 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 450 mA |
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