AFT20P060-4GNR3
RF MOSFET LDMOS 28V OM780G-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. AFT20P060-4GNR3 is a high-performance LDMOS RF power transistor designed for demanding applications. This dual-configuration device operates at a test voltage of 28V and features a 65V breakdown voltage. With a frequency range up to 2.17GHz, it delivers a nominal output power of 6.3W at a 450mA test current, offering a gain of 18.9dB. The AFT20P060-4GNR3 utilizes OM-780G-4L packaging for surface mounting and is supplied on tape and reel. This component is well-suited for use in base station infrastructure and high-power RF systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-780G-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.17GHz |
| Configuration | Dual |
| Power - Output | 6.3W |
| Gain | 18.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-780G-4L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 450 mA |
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