AFT18P350-4S2LR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. AFT18P350-4S2LR6 is a 65V LDMOS RF power MOSFET designed for high-performance applications. This dual-channel device operates at 1.81GHz, delivering 63W of output power with a typical gain of 16.1dB. Tested at 28V, it handles 1A of current. The component utilizes the NI-1230-4LS2L package, suitable for chassis mounting and supplied on tape and reel. This RF MOSFET is engineered for demanding wireless infrastructure and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.81GHz |
| Configuration | Dual |
| Power - Output | 63W |
| Gain | 16.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1 A |
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