AFT18H357-24SR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. AFT18H357-24SR6 is an RF LDMOS transistor designed for high-power applications. This dual-configuration device operates at 1.81 GHz, delivering a typical output power of 65W with 17.3dB of gain at a test voltage of 28V and a test current of 800mA. The transistor is housed in a NI-1230-4LS2L package, suitable for chassis mounting, and is supplied on a tape and reel. Its robust LDMOS technology enables efficient operation in demanding wireless infrastructure, base station, and power amplifier applications. The rated voltage for this component is 65V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.81GHz |
| Configuration | Dual |
| Power - Output | 63W |
| Gain | 17.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 800 mA |
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