AFT09S200W02SR3
RF MOSFET LDMOS 4W PLDManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc.'s AFT09S200W02SR3 RF power MOSFET delivers 4W of output power in a PLD package, suitable for demanding RF applications. This LDMOS transistor is engineered for robust performance in high-frequency environments. Its design is optimized for efficiency and reliability, making it a key component in wireless infrastructure and broadcast transmitters. Supplied on tape and reel, the AFT09S200W02SR3 facilitates high-volume manufacturing processes. This device is a foundational element for engineers developing advanced radio frequency systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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