AFT09S200W02NR3
RF MOSFET LDMOS 28V OM780-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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This NXP USA Inc. RF MOSFET, part number AFT09S200W02NR3, is a 28V LDMOS device designed for high-power RF applications. Operating at 960MHz, this component delivers 56W of output power with a gain of 19.2dB, tested at 1.4A. The device is housed in an OM-780-2 package suitable for surface mounting and is supplied on tape and reel. Its LDMOS technology ensures robust performance in demanding environments. This RF power transistor is commonly utilized in base station infrastructure and industrial, scientific, and medical (ISM) applications requiring efficient power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-780-2 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 960MHz |
| Power - Output | 56W |
| Gain | 19.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-780-2 |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
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