AFT09S200W02GNR3
RF MOSFET LDMOS 28V OM780-2Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. AFT09S200W02GNR3 is a 28V LDMOS RF power transistor. This device delivers 56W of output power at 960MHz with a typical gain of 19.2dB, tested at 1.4A. Engineered in the OM-780-2G package, it features gull-wing leads for robust mounting. The advanced LDMOS technology employed ensures high performance and reliability in demanding RF applications. This component is widely utilized in base station infrastructure and public mobile radio systems. Available in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-780-2G |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 960MHz |
| Power - Output | 56W |
| Gain | 19.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-780-2 Gull |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
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