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AFT09H310-04GSR6

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AFT09H310-04GSR6

RF MOSFET 28V NI1230

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. RF MOSFET, AFT09H310-04GSR6, is a high-performance N-channel power transistor designed for demanding RF applications. This component operates with a rated voltage of 70V and a test voltage of 28V, delivering 56W of output power at 920MHz. Key parameters include a test current of 680mA and a significant gain of 17.9dB. The AFT09H310-04GSR6 utilizes Metal Oxide technology and is housed in a NI-1230S-4 GULL package, supplied on tape and reel. Its robust design makes it suitable for use in base station infrastructure, aerospace, and defense systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseNI-1230S-4 GW
Current Rating (Amps)-
Mounting TypeChassis Mount
Frequency920MHz
ConfigurationN-Channel
Power - Output56W
Gain17.9dB
TechnologyMOSFET (Metal Oxide)
Noise Figure-
Supplier Device PackageNI-1230S-4 GULL
Voltage - Rated70 V
Voltage - Test28 V
Current - Test680 mA

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