AFT05MS006NT1
RF MOSFET LDMOS 7.5V PLD-1.5WManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. AFT05MS006NT1 is a high-performance RF LDMOS MOSFET designed for demanding applications. This component operates at a drain-source voltage of 30V, with a test voltage of 7.5V and a drain current of 100mA. It delivers a substantial output power of 6W at a frequency of 520MHz, exhibiting a gain of 18.3dB. Packaged in a surface-mount PLD-1.5W configuration and supplied on tape and reel, the AFT05MS006NT1 is suitable for high-frequency power amplification in sectors such as wireless infrastructure and industrial RF systems. Its LDMOS technology ensures robust performance and efficiency in challenging RF environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PLD-1.5W |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 520MHz |
| Power - Output | 6W |
| Gain | 18.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PLD-1.5W |
| Voltage - Rated | 30 V |
| Voltage - Test | 7.5 V |
| Current - Test | 100 mA |
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