AFG24S100HR5
RF MOSFET LDMOS NI360Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the AFG24S100HR5, a high-power RF MOSFET utilizing LDMOS technology. This component operates across a frequency range of 1MHz to 2.5GHz, delivering a robust 100W of output power with a typical gain of 16.3dB. Designed for demanding applications, it features a 50V rating and is supplied in the NI-360H-2SB package, configured for chassis mounting and delivered on tape and reel. The AFG24S100HR5 is engineered for performance in base station infrastructure and industrial heating applications where reliable high-frequency power amplification is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-360H-2SB |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1MHz ~ 2.5GHz |
| Configuration | - |
| Power - Output | 100W |
| Gain | 16.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-360H-2SB |
| Voltage - Rated | 50 V |
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