A5G35H110NT4
RF MOSFET GAN 48V 6DFNManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A5G35H110NT4, a Gallium Nitride (GaN) RF MOSFET designed for high-performance applications. This component operates within the 3.3GHz to 3.7GHz frequency range, delivering an output power of 15.1W with a gain of 15.3dB. It is rated for 48V test voltage and features a 6-PDFN (7x6.5) package for surface mounting. This device is suitable for use in a variety of RF power amplifier designs across telecommunications and radar systems. The A5G35H110NT4 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-LDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3.3GHz ~ 3.7GHz |
| Configuration | - |
| Power - Output | 15.1W |
| Gain | 15.3dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | 6-PDFN (7x6.5) |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 70 mA |
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