Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

RF FETs, MOSFETs

A5G35H110N-3400

Banner
productimage

A5G35H110N-3400

RF MOSFET 48V 6DFN

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. RF MOSFET, part number A5G35H110N-3400, is a surface-mount device designed for high-frequency applications. This 6-PDFN (7x6.5) packaged component operates within the 3.3GHz to 3.7GHz frequency range, delivering a typical gain of 15.3dB. It is rated for 48V test voltage and can handle 70mA of current. The device provides an output power of 15.1W. This RF MOSFET is suitable for use in wireless infrastructure, radar systems, and other demanding RF power amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-LDFN Exposed Pad
Current Rating (Amps)-
Mounting TypeSurface Mount
Frequency3.3GHz ~ 3.7GHz
Configuration-
Power - Output15.1W
Gain15.3dB
Technology-
Noise Figure-
Supplier Device Package6-PDFN (7x6.5)
Voltage - Rated125 V
Voltage - Test48 V
Current - Test70 mA

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MRF6S19200HSR5

RF MOSFET LDMOS 28V NI780

product image
MRF6V2010NBR1

RF MOSFET LDMOS 50V TO272-2

product image
MRF1513NT1

RF MOSFET LDMOS 12.5V PLD-1.5