A5G23H110NT4
RF MOSFET 48V 6DFNManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. A5G23H110NT4 is a high-performance RF MOSFET designed for demanding applications. This component operates within the 2.3GHz to 2.4GHz frequency range, delivering a typical gain of 17.9dB and an output power of 13.8W. It is rated for a test voltage of 48V, with a breakdown voltage of 125V. The device features a 6-PDFN (7x6.5) package with an exposed pad for optimal thermal management, suitable for surface mount configurations. This RF MOSFET is commonly utilized in wireless infrastructure, radar systems, and other high-frequency communication platforms. The A5G23H110NT4 is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-LDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.3GHz ~ 2.4GHz |
| Configuration | - |
| Power - Output | 13.8W |
| Gain | 17.9dB |
| Noise Figure | - |
| Supplier Device Package | 6-PDFN (7x6.5) |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 60 mA |
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