A3T23H450W23SR6
RF MOSFET LDMOSManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A3T23H450W23SR6, a high-performance RF MOSFET LDMOS device. This component is engineered for demanding RF power applications, delivering exceptional linearity and efficiency. Its robust LDMOS technology ensures reliable operation across a broad frequency range, making it suitable for base station infrastructure, radar systems, and industrial heating applications. Packaged in a Tape & Reel (TR) format for automated assembly, the A3T23H450W23SR6 offers a streamlined integration into manufacturing processes. This device is a critical element for designers focused on optimizing performance and reliability in advanced RF power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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