A3T21H455W23SR6
RF MOSFET LDMOS 30V ACP1230S-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A3T21H455W23SR6 is a high-performance RF LDMOS transistor designed for demanding applications. This dual-channel device operates within the 2.11GHz to 2.2GHz frequency range, delivering a significant 87W of output power. It features a 30V test voltage and a 65V rated voltage, with a current rating of 400 mA at the test condition. The transistor offers a 15dB gain and is supplied in the ACP-1230S-4L2S package, presented on tape and reel. Its robust LDMOS technology ensures efficiency and reliability in applications across wireless infrastructure and high-frequency power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ACP-1230S-4L2S |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 2.11GHz ~ 2.2GHz |
| Configuration | Dual |
| Power - Output | 87W |
| Gain | 15dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | ACP-1230S-4L2S |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 400 mA |
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