A3T21H450W23SR6
RF MOSFET LDMOS 30V ACP1230S-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A3T21H450W23SR6, an LDMOS RF power transistor. This component operates within a frequency range of 2.11 GHz to 2.2 GHz, delivering 87W of output power. It is rated for a drain-source voltage of 65V, with a test voltage of 30V and a drain current of 600mA at 2.11GHz. Featuring a gain of 15.4dB, this transistor is housed in an ACP-1230S-4L2S package and is supplied on a Tape & Reel (TR) for efficient automated assembly. Its robust design makes it suitable for applications in cellular infrastructure and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ACP-1230S-4L2S |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 2.11GHz ~ 2.2GHz |
| Power - Output | 87W |
| Gain | 15.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | ACP-1230S-4L2S |
| Voltage - Rated | 65 V |
| Voltage - Test | 30 V |
| Current - Test | 600 mA |
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