A3T21H360W23SR6
RF MOSFET LDMOS 28V ACP1230S-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET, A3T21H360W23SR6, is a dual-channel LDMOS power transistor designed for high-frequency applications. Operating within the 2.11GHz to 2.2GHz range, this component delivers a robust 328W of output power at a 28V test voltage. It offers a typical gain of 16.4dB with a 600mA test current. The LDMOS technology ensures efficient performance in demanding RF power amplifier designs. This device is supplied in the ACP-1230S-4L2S package, mounted via chassis mount, and is available on tape and reel. It finds application in wireless infrastructure and other high-power RF systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ACP-1230S-4L2S |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 2.11GHz ~ 2.2GHz |
| Configuration | Dual |
| Power - Output | 328W |
| Gain | 16.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | ACP-1230S-4L2S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 600 mA |
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