A3T18H360W23SR6
RF MOSFET LDMOS 28V ACP1230S-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. RF MOSFET, LDMOS technology, Part Number A3T18H360W23SR6 is a high-power RF power transistor designed for demanding wireless applications. This component operates within the 1.8GHz to 1.88GHz frequency range, delivering a typical output power of 63W. Key performance characteristics include a 16.6dB gain and a test current of 700mA at a 28V test voltage. The device is rated for 65V and is housed in an ACP-1230S-4L2S package, suitable for chassis mounting. This RF MOSFET is commonly utilized in base station infrastructure, radar systems, and other high-frequency communication platforms. It is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | ACP-1230S-4L2S |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 1.8GHz ~ 1.88GHz |
| Power - Output | 63W |
| Gain | 16.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | ACP-1230S-4L2S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 700 mA |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF6V2010NBR1
RF MOSFET LDMOS 50V TO272-2
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
