A3I25X050NR1
RF MOSFET LDMOS 28V OM400-8Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. RF MOSFET LDMOS A3I25X050NR1 is a dual N-channel device designed for high-frequency applications. Operating within the 2.3GHz to 2.7GHz range, this component delivers a 5.6W output power with a typical gain of 28.8dB at a drain voltage of 28V and a drain current of 130mA. Engineered with LDMOS technology, it is packaged in an OM-400-8 surface mount configuration, supplied on tape and reel. The device features a rated voltage of 65V and is suitable for use in wireless infrastructure and high-power RF amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-400-8 |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 2.3GHz ~ 2.7GHz |
| Configuration | 2 N-Channel |
| Power - Output | 5.6W |
| Gain | 28.8dB |
| Technology | LDMOS (Dual) |
| Noise Figure | - |
| Supplier Device Package | OM-400-8 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 130 mA |
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