A3I25X050GNR1
RF MOSFET LDMOS 28V OM400G-8Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A3I25X050GNR1, an RF MOSFET LDMOS device operating within the 2.3GHz to 2.7GHz frequency range. This component features a 28V test voltage and delivers 5.6W of output power with a gain of 28.8dB. Configured with 2 N-Channel LDMOS transistors, it is rated for 65V. The device is supplied in an OM-400G-8 surface mount package on tape and reel. This RF MOSFET is suitable for applications in wireless infrastructure and broadband communications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-400G-8 |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 2.3GHz ~ 2.7GHz |
| Configuration | 2 N-Channel |
| Power - Output | 5.6W |
| Gain | 28.8dB |
| Technology | LDMOS (Dual) |
| Noise Figure | - |
| Supplier Device Package | OM-400G-8 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 130 mA |
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