A3G26H502W17SR3
RF MOSFET GAN 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. A3G26H502W17SR3 is a 48V, 80W Gallium Nitride (GaN) RF power MOSFET designed for high-frequency applications. This N-Channel device operates within a frequency range of 2.496GHz to 2.69GHz, offering a typical gain of 13.1dB. With a test current of 370mA, it is suitable for demanding RF power amplification stages. The component is supplied in the NI-780-4S2S package, presented on a Tape & Reel (TR) for efficient automated assembly. This RF power MOSFET is commonly utilized in base station infrastructure, radar systems, and other high-performance wireless communication applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4S2S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.496GHz ~ 2.69GHz |
| Configuration | 2 N-Channel |
| Power - Output | 80W |
| Gain | 13.1dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-780-4S2S |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 370 mA |