A3G26H350W17SR3
RF MOSFET GAN 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A3G26H350W17SR3, a high-performance RF power transistor utilizing Gallium Nitride (GaN) technology. This component operates within the 2.496 GHz to 2.69 GHz frequency range, delivering a nominal output power of 59W. Tested at 48V, it exhibits a gain of 13.3dB with a test current of 250 mA. The A3G26H350W17SR3 is supplied in the NI-780S-4S2S package, presented on a tape and reel. This device is well-suited for demanding applications in industrial, medical, and defense sectors where robust RF performance is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4S2S |
| Current Rating (Amps) | - |
| Frequency | 2.496GHz ~ 2.69GHz |
| Configuration | - |
| Power - Output | 59W |
| Gain | 13.3dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4S2S |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 250 mA |
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