A3G26H200W17SR3
RF MOSFET GAN 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. RF MOSFET, part number A3G26H200W17SR3, is a GaN-based power transistor designed for high-frequency applications. This component operates within a frequency range of 2.496GHz to 2.69GHz, delivering a power output of 34W at a test voltage of 48V. It features a gain of 14.2dB and a test current of 120mA. The device is packaged in the NI-780S-4S2S form factor and supplied on tape and reel. This RF power transistor is suitable for use in wireless infrastructure and radar systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4S2S |
| Current Rating (Amps) | - |
| Frequency | 2.496GHz ~ 2.69GHz |
| Configuration | - |
| Power - Output | 34W |
| Gain | 14.2dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4S2S |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 120 mA |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF6V2010NBR1
RF MOSFET LDMOS 50V TO272-2
MRFE6S9205HSR3
RF MOSFET LDMOS 28V NI880S
