A3G26D055N-2600
RF MOSFET 48V 6DFNManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc.'s A3G26D055N-2600 is a high-performance RF MOSFET designed for demanding applications. This component operates across a frequency range of 100MHz to 2.69GHz, delivering a typical gain of 13.9dB. Engineered for robust performance, it offers an 8W output power capability at a test voltage of 48V, with a breakdown voltage of 125V. The device is presented in a compact 6-LDFN Exposed Pad package, specifically a 6-PDFN (7x6.5) footprint, facilitating surface mount integration. This RF MOSFET is suited for use in wireless infrastructure, base stations, and other high-frequency communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-LDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 100MHz ~ 2.69GHz |
| Configuration | - |
| Power - Output | 8W |
| Gain | 13.9dB |
| Technology | - |
| Noise Figure | - |
| Supplier Device Package | 6-PDFN (7x6.5) |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 40 mA |
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