A3G26D055N-2515
RF MOSFET GAN 48V 6DFNManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A3G26D055N-2515, a Gallium Nitride (GaN) RF MOSFET designed for high-frequency applications. This component operates within a frequency range of 100MHz to 2.69GHz, offering a gain of 13.9dB. It is rated for 48V test voltage and features a 6-PDFN (7x6.5) package for surface mounting. With an output power capability of 8W and a current rating of 40mA at 48V, it is suitable for demanding RF power amplifier designs. The A3G26D055N-2515 is commonly utilized in base station infrastructure, radar systems, and satellite communications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-LDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 100MHz ~ 2.69GHz |
| Power - Output | 8W |
| Gain | 13.9dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | 6-PDFN (7x6.5) |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 40 mA |
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