A3G26D055N-2400
RF GAN AMPLIFIER 48V 6DFNManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. A3G26D055N-2400 is a Gallium Nitride (GaN) RF power amplifier designed for high-frequency applications. This surface-mount component operates across a frequency range of 100MHz to 2.69GHz, delivering a nominal output power of 8W with a gain of 13.9dB at a test voltage of 48V. The device features a 6-PDFN (7x6.5) package with an exposed pad for enhanced thermal management. Its robust GaN technology enables efficient power amplification, making it suitable for demanding applications in wireless infrastructure, radar systems, and satellite communications. The A3G26D055N-2400 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-LDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 100MHz ~ 2.69GHz |
| Power - Output | 8W |
| Gain | 13.9dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | 6-PDFN (7x6.5) |
| Grade | - |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 40 mA |
| Qualification | - |
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