A3G26D055N-2110
RF MOSFET GAN 48V 6DFNManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A3G26D055N-2110, a Gallium Nitride (GaN) RF MOSFET designed for high-performance applications. This device operates across a frequency range of 100MHz to 2.69GHz, delivering 8W of output power with a typical gain of 13.9dB at a test voltage of 48V. The A3G26D055N-2110 features a 6-PDFN (7x6.5) package with an exposed pad for efficient thermal management, suitable for surface mounting. Its robust GaN technology enables superior efficiency and power handling compared to traditional silicon-based RF power transistors. This component is commonly utilized in demanding applications within the aerospace, defense, and wireless infrastructure sectors where reliable and efficient RF power amplification is critical. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-LDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 100MHz ~ 2.69GHz |
| Power - Output | 8W |
| Gain | 13.9dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | 6-PDFN (7x6.5) |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 40 mA |
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