A3G26D055N-1805
RF MOSFET GAN 48V 6DFNManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A3G26D055N-1805 is a Gallium Nitride (GaN) RF MOSFET designed for high-frequency applications. This component operates across a frequency range of 100MHz to 2.69GHz, delivering a typical gain of 13.9dB. The device supports a 48V test voltage and can output up to 8W of power. It is housed in a compact 6-LDFN exposed pad package, specifically a 6-PDFN (7x6.5) format, suitable for surface mounting. Key applications for this RF MOSFET include base stations, radar systems, and other demanding wireless infrastructure and industrial RF power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-LDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 100MHz ~ 2.69GHz |
| Power - Output | 8W |
| Gain | 13.9dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | 6-PDFN (7x6.5) |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 40 mA |
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