A3G26D055N-100
RF MOSFET GAN 48V 6DFNManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF Power MOSFET, part number A3G26D055N-100, is a Gallium Nitride (GaN) device designed for high-frequency applications. This surface-mount component operates across a frequency range of 100MHz to 2.69GHz, delivering 8W of output power with a typical gain of 13.9dB at a test voltage of 48V. The device is housed in a 6-lead PDFN (7x6.5) package with an exposed pad. It is suitable for demanding applications in sectors such as telecommunications, radar systems, and satellite communications where high power efficiency and performance are critical. The A3G26D055N-100 utilizes advanced GaN technology for superior performance characteristics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-LDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 100MHz ~ 2.69GHz |
| Power - Output | 8W |
| Gain | 13.9dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | 6-PDFN (7x6.5) |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 40 mA |
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