A3G23H500W17SR3
RF MOSFET GAN 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. presents the A3G23H500W17SR3, a Gallium Nitride (GaN) RF MOSFET designed for high-power applications. This component operates across a frequency range of 2.3GHz to 2.4GHz, delivering a nominal output power of 80W. It features a 48V test voltage and a 125V rated voltage, with a typical gain of 14.3dB. The A3G23H500W17SR3 is packaged in the NI-780-4S2S configuration and is supplied on tape and reel. This device is suitable for use in base station infrastructure and public safety radio systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4S2S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.3GHz ~ 2.4GHz |
| Configuration | 2 N-Channel |
| Power - Output | 80W |
| Gain | 14.3dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-780-4S2S |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 300 mA |
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