A3G18H500-04SR3
RF MOSFET LDMOS 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A3G18H500-04SR3 is a dual RF LDMOS power transistor designed for high-power applications. Operating within the 1.805GHz to 1.88GHz frequency range, this device delivers a typical gain of 15.4dB and an output power of 107W at a 48V test voltage. The A3G18H500-04SR3 features a current rating of 200mA at test conditions and is housed in a NI-780S-4L package for surface mounting. Its robust LDMOS technology ensures reliable performance in demanding environments. This component is commonly utilized in base station infrastructure and other high-frequency power amplification systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.805GHz ~ 1.88GHz |
| Configuration | Dual |
| Power - Output | 107W |
| Gain | 15.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 200 mA |
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