A3G18D510-04SR3
RF MOSFET GAN 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A3G18D510-04SR3 is a Gallium Nitride (GaN) RF power MOSFET operating in the 1.805GHz to 2.2GHz frequency range. This device delivers 56W of output power with a typical gain of 16dB, tested at 48V and 250mA. Engineered for demanding RF applications, it is housed in a NI-780S-4L surface-mount package and supplied on tape and reel. The A3G18D510-04SR3 is suitable for use in base station infrastructure and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.805GHz ~ 2.2GHz |
| Configuration | - |
| Power - Output | 56W |
| Gain | 16dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 250 mA |
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