A2V09H400-04SR3
RF MOSFET LDMOS 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2V09H400-04SR3 is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. This dual-configuration device operates within the 720MHz to 960MHz frequency range, delivering 102W of output power with a typical gain of 18.7dB at a test voltage of 48V and 750mA. Engineered with LDMOS technology, it offers robust performance and efficiency. The transistor is supplied in the NI-780S-4L package, suitable for surface mounting and presented on tape and reel for automated assembly. This component is commonly utilized in base station and broadcast transmitter designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 720MHz ~ 960MHz |
| Configuration | Dual |
| Power - Output | 102W |
| Gain | 18.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 105 V |
| Voltage - Test | 48 V |
| Current - Test | 750 mA |
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