A2T26H300-24SR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A2T26H300-24SR6, a high-power RF LDMOS transistor designed for demanding applications. This dual-configuration device operates at 2.5 GHz, delivering a 60W output power with a 14.5dB gain. Tested at 28V with an 800mA current, it features a 65V voltage rating and is housed in a NI-1230-4LS2L package, supplied on tape and reel. Its robust LDMOS technology makes it suitable for use in base station infrastructure, satellite communications, and industrial heating systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.5GHz |
| Configuration | Dual |
| Power - Output | 60W |
| Gain | 14.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 800 mA |
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