A2T26H165-24SR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET LDMOS 28V NI780, part number A2T26H165-24SR3, is a high-performance RF power transistor designed for demanding applications. This component operates at 2.5GHz with a typical gain of 14.7dB and delivers 32W of output power. It features a 28V test voltage and is rated for a maximum voltage of 65V. The LDMOS technology ensures excellent linearity and efficiency. Supplied in a NI-780S-4L2L package and presented on tape and reel (TR), this device is suitable for mounting on chassis. Its robust specifications make it ideal for use in wireless infrastructure, base stations, and other high-frequency communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.5GHz |
| Configuration | Dual |
| Power - Output | 32W |
| Gain | 14.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 400 mA |
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