A2T23H300-24SR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2T23H300-24SR6 is a high-performance RF LDMOS transistor designed for demanding applications. This dual-configuration device operates at 2.3GHz, delivering 66W of output power with a typical gain of 14.9dB at a 28V test voltage and 750mA test current. Featuring the NI-1230-4LS2L package for robust thermal management and chassis mounting, this component is engineered for reliability in wireless infrastructure, radar systems, and industrial heating applications. The LDMOS technology ensures excellent linearity and efficiency for advanced RF designs. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.3GHz |
| Configuration | Dual |
| Power - Output | 66W |
| Gain | 14.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 750 mA |