A2T23H160-24SR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET A2T23H160-24SR3, utilizing LDMOS technology, delivers 28W of output power at 2.3GHz. This dual-configuration device operates with a 28V test voltage and a rated voltage of 65V, featuring a typical gain of 17.7dB. The component is presented in a NI-780S-4L2L package, supplied on tape and reel. Its performance characteristics make it suitable for applications in base station infrastructure and other high-frequency wireless communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.3GHz |
| Configuration | Dual |
| Power - Output | 28W |
| Gain | 17.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 350 mA |
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