A2T21S260W12NR3
RF MOSFET LDMOS 28V OM880X-2L2LManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A2T21S260W12NR3, an RF LDMOS MOSFET designed for high-power applications. This component operates within the 2.11 GHz to 2.2 GHz frequency range, delivering a 218W output power with a typical gain of 17.9dB at a 28V test voltage. The device is rated for 65V and features a 1.6A test current. Its LDMOS technology ensures robust performance in demanding environments. Packaged in the OM-880X-2L2L, this component is supplied on tape and reel. This RF MOSFET is suitable for use in base station infrastructure and other wireless communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-880X-2L2L |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 2.11GHz ~ 2.2GHz |
| Power - Output | 218W |
| Gain | 17.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-880X-2L2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.6 A |
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