Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

RF FETs, MOSFETs

A2T21S161W12SR3

Banner
productimage

A2T21S161W12SR3

RF MOSFET LDMOS NI780

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. presents the A2T21S161W12SR3, an RF LDMOS transistor designed for high-power applications. This component operates within the 2.11 GHz to 2.2 GHz frequency range, delivering a robust 38W of output power. Engineered with LDMOS technology, it offers superior performance characteristics for demanding RF power amplification. The device is housed in a NI-780-2S2L package, suitable for chassis mounting and supplied in Tape & Reel (TR) for efficient manufacturing integration. Its 28V rated voltage makes it a suitable choice for base station infrastructure and other wireless communication systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseNI-780-2S2L
Current Rating (Amps)-
Mounting TypeChassis Mount
Frequency2.11GHz ~ 2.2GHz
Power - Output38W
Gain-
TechnologyLDMOS
Noise Figure-
Supplier Device PackageNI-780-2S2L
Voltage - Rated28 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MRF6S19200HSR5

RF MOSFET LDMOS 28V NI780

product image
MRF6V2010NBR1

RF MOSFET LDMOS 50V TO272-2

product image
MRFE6S9205HSR3

RF MOSFET LDMOS 28V NI880S