A2T21H410-24SR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET LDMOS transistor, part number A2T21H410-24SR6. This component is designed for RF power applications, operating at a frequency of 2.17GHz with a typical power output of 72W. It features a 28V test voltage and a 65V rating, with a current capability of 600mA at the specified test conditions. The device offers a gain of 15.6dB and utilizes LDMOS technology for high-frequency performance. The NI-1230-4LS2L package is supplied on tape and reel. This RF MOSFET is commonly found in applications such as base station infrastructure and general-purpose RF power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 2.17GHz |
| Configuration | Dual |
| Power - Output | 72W |
| Gain | 15.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 600 mA |
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