A2T21H360-23NR6
RF MOSFET LDMOS 28V OM1230-42Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. RF MOSFET LDMOS 28V, part number A2T21H360-23NR6, is a high-power RF power transistor designed for demanding applications. This device operates within the 2.11GHz to 2.2GHz frequency range, delivering a nominal gain of 16.8dB. It is rated for 28V test voltage and features a 373W output power capability, with a 500mA test current. The LDMOS technology ensures robust performance. Packaged in an OM-1230-4L2L configuration and supplied on tape and reel, this component is suitable for use in base station infrastructure and point-to-point communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-1230-4L2L |
| Current Rating (Amps) | 10µA |
| Frequency | 2.11GHz ~ 2.2GHz |
| Configuration | Dual |
| Power - Output | 373W |
| Gain | 16.8dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-1230-4L2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 500 mA |
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