A2T21H140-24SR3
RF MOSFET LDMOS 28V OM780-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A2T21H140-24SR3, an RF LDMOS transistor designed for high-power applications. This component operates within the 2.11GHz to 2.17GHz frequency range, delivering a robust 169W output power. Tested at 28V, it exhibits a typical gain of 17.4dB with a continuous drain current of 350mA. The A2T21H140-24SR3 is housed in an OM780-4 package, supplied on tape and reel. Its LDMOS technology ensures efficient performance in demanding RF power amplifier circuits found in base stations, radar systems, and other wireless infrastructure. The device is rated for a drain-source voltage of 65V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM780-4 |
| Current Rating (Amps) | 10µA |
| Frequency | 2.11GHz ~ 2.17GHz |
| Configuration | Dual |
| Power - Output | 169W |
| Gain | 17.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM780-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 350 mA |
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