NXP USA Inc. presents the A2T21H100-25SR3, an RF MOSFET LDMOS device. This N-channel Metal Oxide Semiconductor field-effect transistor is engineered for high-performance radio frequency applications. Its advanced LDMOS technology facilitates robust power amplification and efficient signal handling. The A2T21H100-25SR3 is supplied in Tape & Reel packaging, suitable for automated assembly processes. This component finds application in demanding wireless infrastructure, radar systems, and broadcast equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet: